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MDE-Semiconductor Datasheet Catalog
| Part Name | Manufacturer | Description |
| MPTE-45C | MDE Semiconductor | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MPTE-5 | MDE Semiconductor | 5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MPTE-8 | MDE Semiconductor | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MPTE-8C | MDE Semiconductor | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE10 | MDE Semiconductor | 8.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE100 | MDE Semiconductor | 81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE100A | MDE Semiconductor | 85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE10A | MDE Semiconductor | 8.55V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE11 | MDE Semiconductor | 8.92V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE110 | MDE Semiconductor | 89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE110A | MDE Semiconductor | 94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE11A | MDE Semiconductor | 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE11A | MDE Semiconductor | 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE12 | MDE Semiconductor | 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE120 | MDE Semiconductor | 97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE120A | MDE Semiconductor | 102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE120A | MDE Semiconductor | 102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE12A | MDE Semiconductor | 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE13 | MDE Semiconductor | 10.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE130 | MDE Semiconductor | 105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE130A | MDE Semiconductor | 111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE13A | MDE Semiconductor | 11.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE15 | MDE Semiconductor | 12.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE150 | MDE Semiconductor | 121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE150A | MDE Semiconductor | 128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE15A | MDE Semiconductor | 10.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE16 | MDE Semiconductor | 12.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE160 | MDE Semiconductor | 130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE160A | MDE Semiconductor | 136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE16A | MDE Semiconductor | 12.90V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
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