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Magnatec Datasheet Catalog

Part NameManufacturerDescription
BCU81 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices.
BCU81 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for low voltage applications requiring low loss devices.
BCU83 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices.
BCU83 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring efficient low loss devices.
BCU83D MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BCU86 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BCU86 MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BCU86D MagnatecNPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BCU87 MagnatecPNP epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUL52A MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL54A MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL54B MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL74A MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL74B MagnatecAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUZ900 MagnatecN-channel power MOSFET for audio applications, 160V
BUZ900D MagnatecN-channel power MOSFET for audio applications, 160V
BUZ900DP MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BUZ900P MagnatecN-channel power MOSFET for audio applications, 160V
BUZ900P MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BUZ900X4S MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BUZ901D MagnatecN-channel power MOSFET for audio applications, 200V
BUZ901DP MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ901P MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ901P MagnatecN-channel power MOSFET for audio applications, 200V
BUZ901X4S MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902 MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ902 MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ902D MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ902DP MagnatecN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.

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